发明授权
- 专利标题： Microstructure control of conducting materials through surface coating of powders
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申请号： US17184802申请日： 2021-02-25
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公开(公告)号： US12084763B2公开(公告)日： 2024-09-10
- 发明人: Marc Shull , Peter Reimer , Hong P. Gao , Chandra V. Deshpandey
- 申请人： Applied Materials, Inc.
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Kilpatrick Townsend & Stockton LLP
- 主分类号： C04B35/626
- IPC分类号： C04B35/626 ; C04B35/581 ; C04B35/628 ; C23C16/02 ; C23C16/40 ; C23C16/44 ; C23C16/442 ; C23C16/455 ; C23C16/505 ; H01L21/687
摘要：
Exemplary deposition methods may include introducing hydrogen into a processing chamber, a powder disposed within a processing region of the processing chamber. The method may include striking a first plasma in the processing region, the first plasma including energetic hydrogen species. The method may include exposing the powder to the energetic hydrogen species in the processing region. The method may include chemically reducing the powder through a reaction of the powder with the energetic hydrogen species. The method may include removing process effluents including unreacted hydrogen from the processing region. The method may also include forming a layer of material on grains of the powder within the processing region.
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