Invention Grant
- Patent Title: Vapor phase photoresists deposition
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Application No.: US17351096Application Date: 2021-06-17
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Publication No.: US12084764B2Publication Date: 2024-09-10
- Inventor: Lakmal Charidu Kalutarage , Aaron Dangerfield , Mark Joseph Saly , David Michael Thompson , Susmit Singha Roy , Regina Freed
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: C23C16/455
- IPC: C23C16/455 ; G03F7/16

Abstract:
Embodiments disclosed herein include methods of depositing a metal oxo photoresist using dry deposition processes. In an embodiment, the method for forming a photoresist layer over a substrate in a vacuum chamber comprises providing a metal precursor vapor into the vacuum chamber. In an embodiment, the method further comprises providing an oxidant vapor into the vacuum chamber, where a reaction between the metal precursor vapor and the oxidant vapor results in the formation of the photoresist layer on a surface of the substrate. In an embodiment, the photoresist layer is a metal oxo containing material.
Public/Granted literature
- US20220002869A1 VAPOR PHASE PHOTORESISTS DEPOSITION Public/Granted day:2022-01-06
Information query
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