公开(公告)号：US20230420259A1

公开(公告)日：2023-12-28

申请号：US17836562

申请日：2022-06-09

申请人： APPLIED MATERIALS, INC.

发明人： David Thompson ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Lisa Enman ,  Aaron Dangerfield ,  Jesus Candelario Mendoza ,  Jeffrey W. Anthis ,  Lakmal Kalutarage

IPC分类号： H01L21/306 ,  H01L21/308 ,  H01L21/02

CPC分类号： H01L21/30604 ,  H01L21/02118 ,  H01L21/3081

摘要： Described herein is a method for selectively cleaning and/or etching a sample. The method includes selectively forming a film in a trench of a substrate such that the trench may be selectively etched. A polymer film is deposited on the bottom surface of the trench without being deposited on the side wall. A second film is selectively formed in the trench without forming the second film on the polymer film. The polymer is then removed from the bottom surface of the trench and then etching is performed on the bottom surface of the trench using an etch chemistry, wherein the second film protects the side wall from being etched.

公开(公告)号：US20230132200A1

公开(公告)日：2023-04-27

申请号：US17971212

申请日：2022-10-21

申请人： Applied Materials, Inc.

发明人： Michael L. McSwiney ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Drew Phillips ,  Aaron Dangerfield ,  David Thompson ,  Kevin Kashefi ,  Xiangjin Xie

IPC分类号： H01L21/768 ,  H01L21/02 ,  B05D1/00

摘要： Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, hydroxyl, aldehyde, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

公开(公告)号：US20240339358A1

公开(公告)日：2024-10-10

申请号：US18131956

申请日：2023-04-07

申请人： Applied Materials, Inc.

发明人： Jesus Candelario Mendoza-Gutierrez ,  Aaron Dangerfield ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Yang Zhou ,  Yong Jin Kim ,  Carmen Leal Cervantes ,  Ge Qu ,  Zhiyuan Wu ,  Feng Chen ,  Kevin Kashefi

IPC分类号： H01L21/768 ,  C23C16/18 ,  C23C16/455 ,  C23C16/56

CPC分类号： H01L21/76846 ,  C23C16/18 ,  C23C16/45527 ,  C23C16/56 ,  H01L21/76877

摘要： Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM has a general formula I to XIX, wherein R, R′, R1, R2, R3, R4, and R5 are independently selected from hydrogen (H), alkyl, alkene, alkyne, and aryl, n is from 1 to 20, m is from 1 to 20, x is from 1 to 2, and y is from 1 to 2. A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.

公开(公告)号：US20230295794A1

公开(公告)日：2023-09-21

申请号：US18201442

申请日：2023-05-24

申请人： Applied Materials, Inc.

发明人： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Feng Q. Liu ,  Mark Saly ,  Michael Haverty ,  Muthukumar Kaliappan

IPC分类号： C23C16/04 ,  C23C16/02 ,  C23C16/56 ,  H01L21/32 ,  H01L21/02

CPC分类号： C23C16/042 ,  C23C16/0272 ,  C23C16/56 ,  H01L21/32 ,  H01L21/0228 ,  H01L21/02172 ,  H01L21/02211 ,  H01L21/0217

摘要： Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

公开(公告)号：US20230197438A1

公开(公告)日：2023-06-22

申请号：US18109493

申请日：2023-02-14

申请人： Applied Materials, Inc.

发明人： Aaron Dangerfield ,  Jesus Candelario Mendoza-Gutierrez ,  Bhaskar Jyoti Bhuyan ,  Mark Saly

IPC分类号： H01L21/02 ,  C23C16/02 ,  C23C16/30 ,  C23C16/455 ,  H01L21/311

CPC分类号： H01L21/0217 ,  C23C16/0245 ,  C23C16/308 ,  C23C16/45525 ,  H01L21/02118 ,  H01L21/02211 ,  H01L21/0228 ,  H01L21/02315 ,  H01L21/31138

摘要： Methods of forming semiconductor devices by enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a barrier layer. A substrate with a metal surface, a dielectric surface and an aluminum oxide surface has a blocking layer deposited on the metal surface using an alkylsilane.

公开(公告)号：US20220372616A1

公开(公告)日：2022-11-24

申请号：US17315223

申请日：2021-05-07

申请人： Applied Materials, Inc.

发明人： Lakmal C. Kalutarage ,  Bhaskar Jyoti Bhuyan ,  Aaron Dangerfield ,  Feng Q. Liu ,  Mark Saly ,  Michael Haverty ,  Muthukumar Kaliappan

IPC分类号： C23C16/04 ,  C23C16/56 ,  C23C16/02

摘要： Methods of selectively depositing blocking layers on conductive surfaces over dielectric surfaces are described. In some embodiments, a 4-8 membered substituted heterocycle is exposed to a substrate to selectively form a blocking layer. In some embodiments, a layer is selectively deposited on the dielectric surface after the blocking layer is formed. In some embodiments, the blocking layer is removed.

公开(公告)号：US12094766B2

公开(公告)日：2024-09-17

申请号：US17971212

申请日：2022-10-21

申请人： Applied Materials, Inc.

发明人： Michael L. McSwiney ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Drew Phillips ,  Aaron Dangerfield ,  David Thompson ,  Kevin Kashefi ,  Xiangjin Xie

IPC分类号： H01L21/768 ,  B05D1/00 ,  H01L21/02

CPC分类号： H01L21/76829 ,  B05D1/60 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/76846 ,  H01L21/76877

摘要： Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups selected from alkene, alkyne, ketone, hydroxyl, aldehyde, or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

公开(公告)号：US20240297073A1

公开(公告)日：2024-09-05

申请号：US18117203

申请日：2023-03-03

申请人： Applied Materials, Inc.

发明人： Muthukumar Kaliappan ,  Bhaskar Jyoti Bhuyan ,  Yong Jin Kim ,  Carmen Leal Cervantes ,  Xiangjin Xie ,  Jesus Candelario Mendoza-Gutierrez ,  Aaron Dangerfield ,  Michael Haverty ,  Mark Saly ,  Kevin Kashefi

IPC分类号： H01L21/768

CPC分类号： H01L21/76843 ,  H01L21/76831 ,  H01L21/76877

摘要： Methods of forming semiconductor devices by enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a barrier layer. The methods include exposing a substrate with a metal surface, a dielectric surface and an aluminum oxide surface or an aluminum nitride surface to a blocking molecule to form the blocking layer selectively on the metal surface over the dielectric surface and one of the aluminum oxide surface or the aluminum nitride surface.

公开(公告)号：US11848229B2

公开(公告)日：2023-12-19

申请号：US17971217

申请日：2022-10-21

申请人： Applied Materials, Inc.

发明人： Michael L. McSwiney ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Drew Phillips ,  Aaron Dangerfield ,  David Thompson ,  Kevin Kashefi ,  Xiangjin Xie

IPC分类号： H01L21/768 ,  B05D1/00 ,  H01L21/02

CPC分类号： H01L21/76829 ,  B05D1/60 ,  H01L21/02118 ,  H01L21/02205 ,  H01L21/76846 ,  H01L21/76877

摘要： Methods for selectively depositing on metallic surfaces are disclosed. Some embodiments of the disclosure utilize a hydrocarbon having at least two functional groups, at least one functional group selected from amino groups, hydroxyl groups, ether linkages or combinations thereof to form a self-assembled monolayer (SAM) on metallic surfaces.

公开(公告)号：US20230253248A1

公开(公告)日：2023-08-10

申请号：US18119080

申请日：2023-03-08

申请人： Applied Materials, Inc.

发明人： Yang Zhou ,  Yong Jin Kim ,  Ge Qu ,  Zhiyuan Wu ,  Carmen Leal Cervantes ,  Feng Chen ,  Kevin Kashefi ,  Bhaskar Jyoti Bhuyan ,  Drew Phillips ,  Aaron Dangerfield

IPC分类号： H01L21/768 ,  H01L23/522

CPC分类号： H01L21/76844 ,  H01L21/76846 ,  H01L23/5226 ,  H01L21/28568

摘要： Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap. The SAM comprises a hydrocarbon having a formula of H—C≡C—R, wherein R is a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms or a formula of R′C═CR″, wherein R′ and R″ independently include a linear alkyl chain or aryl group comprising from 1 to 20 carbon atoms A barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.