Invention Grant
- Patent Title: Method of producing large EMI shielded GaAs and GaP infrared windows
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Application No.: US18073183Application Date: 2022-12-01
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Publication No.: US12084791B2Publication Date: 2024-09-10
- Inventor: Peter G. Schunemann , Kevin T. Zawilski
- Applicant: BAE SYSTEMS Information and Electronic Systems Integration Inc.
- Applicant Address: US NH Nashua
- Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee Address: US NH Nashua
- Agency: Maine Cernota & Curran
- Agent Gary McFaline
- Main IPC: C30B29/42
- IPC: C30B29/42 ; C23C16/30 ; C30B29/44 ; C30B33/06

Abstract:
A method of making GaP window slabs having largest dimensions of greater than 4 inches and GaAs IR window slabs having largest dimensions of greater than 8 inches, includes slicing and dicing at least one smaller GaAs or GaP single crystal boule, which can be a commercial boule, to form a plurality of rectangular slabs. The slabs are ground to have precisely perpendicular edges, which are polished to be ultra-flat and ultra-smooth, for example to a flatness of at least λ/10, and a roughness Ra of less than 10 nanometers. The slab edges are then aligned and fused via optical-contacting/bonding to create a large GaAs or GaP slab having negligible bond interface losses. A conductive, doped GaAs or GaP layer can be applied to the window for EMI shielding in a subsequent vacuum deposition step, followed by applying anti-reflection (AR) coatings to one or both of the slab faces.
Public/Granted literature
- US20240183075A1 METHOD OF PRODUCING LARGE EMI SHIELDED GaAs AND GaP INFRARED WINDOWS Public/Granted day:2024-06-06
Information query
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