公开(公告)号：US20250002354A1

公开(公告)日：2025-01-02

申请号：US18658804

申请日：2024-05-08

Applicant: NanoXplore Inc.

Inventor： Marie BOZALINA ,  Philippe Perret ,  Soroush Nazarpour

IPC: C01B32/19 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B32/23 ,  C30B29/02 ,  C30B29/16 ,  C30B29/60 ,  C30B29/64 ,  C30B33/00 ,  C30B33/04 ,  C30B33/06 ,  H01G11/36 ,  H01M4/587

Abstract: Embodiments described herein relate generally to the large scale production of functionalized graphene. In some embodiments, a method for producing functionalized graphene includes combining a crystalline graphite with a first electrolyte solution that includes at least one of a metal hydroxide salt, an oxidizer, and a surfactant. The crystalline graphite is then milled in the presence of the first electrolyte solution for a first time period to produce a thinned intermediate material. The thinned intermediate material is combined with a second electrolyte solution that includes a strong oxidizer and at least one of a metal hydroxide salt, a weak oxidizer, and a surfactant. The thinned intermediate material is then milled in the presence of the second electrolyte solution for a second time period to produce functionalized graphene.

公开(公告)号：US12142888B2

公开(公告)日：2024-11-12

申请号：US17050433

申请日：2019-04-24

Applicant: National University Corporation Kitami Institute of Technology ,  Inter-University Research Institute Corporation National Institutes of Natural Sciences

Inventor： Hiroaki Furuse ,  Yuki Koike ,  Ryo Yasuhara

IPC: H01S3/04 ,  C30B29/04 ,  C30B29/06 ,  C30B29/28 ,  C30B29/36 ,  C30B29/40 ,  C30B33/06 ,  H01S3/067

Abstract: A joined body (10) includes an optical material (11) and a cooling material (12) that are capable of transmitting light and are joined together. At a joining interface between the optical material (11) and the cooling material (12), the joined body (10) is capable of transmitting light, and also an atom contained in the optical material (11) diffusively enters the cooling material (12) in such a degree that an interference fringe is not generated in the joined body (10). A diffusive entry length of an atom contained in the optical material (11) into the cooling material (12) may be in a range from approximately 1.0 nm to approximately 10 μm.

公开(公告)号：US12006220B2

公开(公告)日：2024-06-11

申请号：US17857761

申请日：2022-07-05

Applicant: NanoXplore Inc.

Inventor： Marie Bozalina ,  Philippe Perret ,  Soroush Nazarpour

IPC: C01B32/19 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/184 ,  C01B32/23 ,  C30B29/02 ,  C30B29/16 ,  C30B29/60 ,  C30B29/64 ,  C30B33/00 ,  C30B33/04 ,  C30B33/06 ,  H01G11/36 ,  H01M4/587

CPC classification number: C01B32/19 ,  C01B32/184 ,  C01B32/23 ,  C30B29/02 ,  C30B29/16 ,  C30B29/60 ,  C30B29/64 ,  C30B33/00 ,  C30B33/04 ,  C30B33/06 ,  H01G11/36 ,  H01M4/587 ,  B82Y30/00 ,  B82Y40/00 ,  C01B2204/04 ,  C01P2006/40 ,  Y10S977/734 ,  Y10S977/847 ,  Y10S977/948

Abstract: Embodiments described herein relate generally to the large scale production of functionalized graphene. In some embodiments, a method for producing functionalized graphene includes combining a crystalline graphite with a first electrolyte solution that includes at least one of a metal hydroxide salt, an oxidizer, and a surfactant. The crystalline graphite is then milled in the presence of the first electrolyte solution for a first time period to produce a thinned intermediate material. The thinned intermediate material is combined with a second electrolyte solution that includes a strong oxidizer and at least one of a metal hydroxide salt, a weak oxidizer, and a surfactant. The thinned intermediate material is then milled in the presence of the second electrolyte solution for a second time period to produce functionalized graphene.

公开(公告)号：US20230062310A1

公开(公告)日：2023-03-02

申请号：US17857761

申请日：2022-07-05

Applicant: NanoXplore Inc.

Inventor： Marie BOZALINA ,  Philippe PERRET ,  Soroush NAZARPOUR

IPC: C01B32/19 ,  C30B29/02 ,  C30B33/00 ,  C30B33/06 ,  C01B32/184 ,  H01G11/36 ,  C01B32/23 ,  C30B29/16 ,  C30B29/64 ,  C30B33/04 ,  C30B29/60 ,  H01M4/587 ,  B82Y40/00 ,  B82Y30/00

Abstract: Embodiments described herein relate generally to the large scale production of functionalized graphene. In some embodiments, a method for producing functionalized graphene includes combining a crystalline graphite with a first electrolyte solution that includes at least one of a metal hydroxide salt, an oxidizer, and a surfactant. The crystalline graphite is then milled in the presence of the first electrolyte solution for a first time period to produce a thinned intermediate material. The thinned intermediate material is combined with a second electrolyte solution that includes a strong oxidizer and at least one of a metal hydroxide salt, a weak oxidizer, and a surfactant. The thinned intermediate material is then milled in the presence of the second electrolyte solution for a second time period to produce functionalized graphene.

公开(公告)号：US11551915B2

公开(公告)日：2023-01-10

申请号：US17207693

申请日：2021-03-21

Applicant: THINKON NEW TECHNOLOGY JAPAN CORPORATION

Inventor： Atsushi Ikari ,  Satoshi Fujii

IPC: H01J37/32 ,  C30B29/06 ,  H01L21/67 ,  H01L21/3065 ,  C30B33/06 ,  H01L23/00

Abstract: Provided are a method of manufacturing a ring-shaped member and the ring-shaped member. A method of manufacturing a ring-shaped member to be placed in a process chamber of a substrate processing apparatus includes arranging one silicon member and another silicon member to cause one abutting surface of the one silicon member and another abutting surface of the other silicon member to abut on each other, heating the one abutting surface and the other abutting surface through optical heating to melt silicon on a surface of the one abutting surface and silicon on a surface of the other abutting surface such that silicon melt is caused to flow into a gap between the one abutting surface and the other abutting surface, and cooling the one abutting surface and the other abutting surface to crystallize the silicon melt forming a silicon adhesion part.

公开(公告)号：US11407643B2

公开(公告)日：2022-08-09

申请号：US16692201

申请日：2019-11-22

Applicant: NanoXplore Inc.

Inventor： Marie Bozalina ,  Philippe Perret ,  Soroush Nazarpour

IPC: C01B32/19 ,  C30B33/00 ,  C30B29/02 ,  C30B29/60 ,  C01B32/23 ,  C30B33/06 ,  C30B29/64 ,  C30B33/04 ,  C30B29/16 ,  H01G11/36 ,  H01M4/587 ,  C01B32/184 ,  B82Y30/00 ,  B82Y40/00

Abstract: Embodiments described herein relate generally to the large scale production of functionalized graphene. In some embodiments, a method for producing functionalized graphene includes combining a crystalline graphite with a first electrolyte solution that includes at least one of a metal hydroxide salt, an oxidizer, and a surfactant. The crystalline graphite is then milled in the presence of the first electrolyte solution for a first time period to produce a thinned intermediate material. The thinned intermediate material is combined with a second electrolyte solution that includes a strong oxidizer and at least one of a metal hydroxide salt, a weak oxidizer, and a surfactant. The thinned intermediate material is then milled in the presence of the second electrolyte solution for a second time period to produce functionalized graphene.

公开(公告)号：US11384449B2

公开(公告)日：2022-07-12

申请号：US16817876

申请日：2020-03-13

Applicant: Leo J. Schowalter ,  Robert T. Bondokov ,  James R. Grandusky

Inventor： Leo J. Schowalter ,  Robert T. Bondokov ,  James R. Grandusky

IPC: C30B25/10 ,  C30B29/40 ,  H01S5/02 ,  H01S5/343 ,  C30B23/00 ,  C30B33/06 ,  H01L21/20 ,  H01L33/06 ,  H01L33/00

Abstract: In various embodiments, growth of large, high-quality single crystals of aluminum nitride is enabled via a two-stage process utilizing two different crystalline seeds.

公开(公告)号：US11371139B2

公开(公告)日：2022-06-28

申请号：US16775689

申请日：2020-01-29

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Yoshiki Nishibayashi ,  Natsuo Tatsumi ,  Hitoshi Sumiya ,  Kazuo Nakamae

IPC: C23C16/27 ,  C23C16/01 ,  C30B29/04 ,  C23C16/56 ,  C01B32/25 ,  C30B33/06 ,  C23C16/02 ,  C23C14/48 ,  C30B25/18 ,  C30B25/20 ,  C30B31/22 ,  C30B33/00

Abstract: A method of manufacturing a diamond by a vapor phase synthesis method includes: preparing a substrate including a diamond seed crystal; forming a light absorbing layer lower in optical transparency than the substrate by performing ion implantation into the substrate, the light absorbing layer being formed at a predetermined depth from a main surface of the substrate; growing a diamond layer on the main surface of the substrate by the vapor phase synthesis method; and separating the diamond layer from the substrate by applying light from a main surface of at least one of the diamond layer and the substrate to allow the light absorbing layer to absorb the light and cause the light absorbing layer to be broken up.

公开(公告)号：US11359275B2

公开(公告)日：2022-06-14

申请号：US17032022

申请日：2020-09-25

Applicant: Sumitomo Electric Industries, Ltd.

Inventor： Takuji Okahisa ,  Yoshiyuki Yamamoto ,  Yoshiki Nishibayashi ,  Natsuo Tatsumi

IPC: C30B29/04 ,  C23C16/01 ,  C23C16/27 ,  C23C16/56 ,  C23C16/02 ,  C01B32/25 ,  H01L21/762 ,  C30B33/06 ,  C01B32/26 ,  C23C14/48 ,  C30B25/20 ,  C30B33/02 ,  C30B33/10 ,  C30B25/18

Abstract: A method of manufacturing a diamond substrate includes: forming an ion implantation layer at a side of a main surface of a diamond seed substrate by implanting ions into the main surface of the diamond seed substrate; producing a diamond structure by growing a diamond growth layer by a vapor phase synthesis method on the main surface of the diamond seed substrate, after implanting the ions; and performing heat treatment on the diamond structure. The performed heat treatment causes the diamond structure to be separated along the ion implantation layer into a first structure including the diamond seed substrate and failing to include the diamond growth layer, and a diamond substrate including the diamond growth layer. Thus, the method of manufacturing a diamond substrate is provided that enables a diamond substrate with a large area to be manufactured in a short time and at a low cost.

公开(公告)号：US20220056612A1

公开(公告)日：2022-02-24

申请号：US17520815

申请日：2021-11-08

Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.

Inventor： Yu WANG ,  Tian YANG ,  Zhenxing LIANG ,  Min LI

IPC: C30B23/00 ,  C30B29/36 ,  C30B23/06 ,  C30B33/06

Abstract: The present disclosure provides a device for preparing a crystal and a method for growing a crystal. The device may include a growth chamber configured to execute a crystal growth; and a temperature control system configured to heat the growth chamber to cause that a radial temperature difference in the growth chamber does not exceed a first preset range of an average temperature in the growth chamber during the crystal growth. The method may include placing a seed crystal and a source material in a growth chamber to grow a crystal; and controlling a heating component based on information of a temperature sensing component, to cause that a radial temperature difference in the growth chamber does not exceed a first preset range of an average temperature in the growth chamber during a crystal growth.