Invention Grant
- Patent Title: Memory interface device
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Application No.: US17565937Application Date: 2021-12-30
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Publication No.: US12087392B2Publication Date: 2024-09-10
- Inventor: Young-Deuk Jeon , Min-Hyung Cho , Young-Su Kwon , Jin Ho Han
- Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Agency: KILE PARK REED & HOUTTEMAN PLLC
- Priority: KR 20210034228 2021.03.16 KR 20210190915 2021.12.29
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C7/22 ; G11C8/18

Abstract:
Provided is a memory interface device. A memory interface device, comprising: a DQS input buffer configured to receive input data strobe signals and output a first intermediate data strobe signal, the DQS input buffer providing a static offset; an offset control circuit configured to receive the first intermediate data strobe signal and output a second intermediate data strobe signal; and a duty adjustment buffer configured to receive the second intermediate data strobe signal and output a clean data strobe signal, wherein the offset control circuit provides a dynamic offset using the clean data strobe signal.
Public/Granted literature
- US20220301603A1 MEMORY INTERFACE DEVICE Public/Granted day:2022-09-22
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