Invention Grant
- Patent Title: Method for fabricating an integrated circuit device
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Application No.: US18123317Application Date: 2023-03-19
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Publication No.: US12087712B2Publication Date: 2024-09-10
- Inventor: Purakh Raj Verma , Kuo-Yuh Yang , Chia-Huei Lin , Chu-Chun Chang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- The original application number of the division: US17402633 2021.08.16
- Main IPC: H01L23/66
- IPC: H01L23/66 ; H01L21/56 ; H01L21/71 ; H01L23/00 ; H01L23/522 ; H01L23/532 ; H01L23/58
Abstract:
A method for fabricating an integrated circuit device is disclosed. A substrate is provided and an integrated circuit area is formed on the substrate. The integrated circuit area includes a dielectric stack. A seal ring is formed in the dielectric stack and around a periphery of the integrated circuit area. A trench is formed around the seal ring and exposing a sidewall of the dielectric stack. The trench is formed within a scribe line. A moisture blocking layer is formed on the sidewall of the dielectric stack, thereby sealing a boundary between two adjacent dielectric films in the dielectric stack.
Public/Granted literature
- US20230230938A1 METHOD FOR FABRICATING AN INTEGRATED CIRCUIT DEVICE Public/Granted day:2023-07-20
Information query
IPC分类:
