Invention Grant
- Patent Title: Overvoltage protection circuit for a PMOS based switch
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Application No.: US18157737Application Date: 2023-01-20
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Publication No.: US12088085B2Publication Date: 2024-09-10
- Inventor: Manoj Kumar , Ravinder Kumar , Nicolas Demange
- Applicant: STMICROELECTRONICS (ROUSSET) SAS , STMicroelectronics International N.V.
- Applicant Address: FR Rousset
- Assignee: STMICROELECTRONICS (ROUSSET) SAS,STMicroelectronics International N.V.
- Current Assignee: STMICROELECTRONICS (ROUSSET) SAS,STMicroelectronics International N.V.
- Current Assignee Address: FR Rousset; CH Geneva
- Agency: Seed IP Law Group LLP
- Main IPC: H02H3/20
- IPC: H02H3/20 ; H02H1/00

Abstract:
An integrated circuit includes an overvoltage protection circuit. The overvoltage protection circuit detects overvoltage events at a pad of the integrated circuit. The overvoltage protection circuit generates a max voltage signal that is the greater of the voltage at the pad and a supply voltage of the integrated circuit. The overvoltage protection circuit disables a PMOS transistor coupled to the pad by supplying the max voltage signal to the gate of the PMOS transistor when an overvoltage event is present at the pad.
Public/Granted literature
- US20230155369A1 OVERVOLTAGE PROTECTION CIRCUIT FOR A PMOS BASED SWITCH Public/Granted day:2023-05-18
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