发明授权
- 专利标题： Peripheral circuit having recess gate transistors and method for forming the same
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申请号： US17510752申请日： 2021-10-26
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公开(公告)号： US12089413B2公开(公告)日： 2024-09-10
- 发明人: Yanwei Shi , Yanhong Wang , Cheng Gan , Liang Chen , Wei Liu , Zhiliang Xia , Wenxi Zhou , Kun Zhang , Yuancheng Yang
- 申请人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 申请人地址： CN Wuhan
- 专利权人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 当前专利权人： YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- 当前专利权人地址： CN Wuhan
- 代理机构： BAYES PLLC
- 主分类号： H10B43/40
- IPC分类号： H10B43/40 ; G11C16/04 ; G11C16/24 ; H01L23/00 ; H01L25/00 ; H01L25/065 ; H01L25/18 ; H10B41/41
摘要：
In certain aspects, a memory device includes an array of memory cells and a plurality of peripheral circuits coupled to the array of memory cells. The peripheral circuits include a first peripheral circuit including a recess gate transistor. The peripheral circuits also include a second peripheral circuit including a flat gate transistor.
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