A semiconductor device includes a first fin-shaped pattern which extends lengthwise in a first direction, a second fin-shaped pattern which is spaced apart from the first fin-shaped pattern in a second direction and extends lengthwise in the first direction, a first gate electrode extending lengthwise in the second direction on the first fin-shaped pattern, a second gate electrode extending lengthwise in the second direction on the second fin-shaped pattern, a first gate separation structure which separates the first gate electrode and the second gate electrode and is at the same vertical level as the first gate electrode and the second gate electrode, and a first source/drain contact extending lengthwise in the second direction on the first fin-shaped pattern and the second fin-shaped pattern. The first source/drain contact includes a first lower source/drain contact region which intersects the first fin-shaped pattern and the second fin-shaped pattern, and a first upper source/drain contact region which protrudes from the first lower source/drain contact region, and the first upper source/drain contact region does not overlap the first gate separation structure in the first direction.