- 专利标题: Semiconductor device
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申请号: US17226965申请日: 2021-04-09
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公开(公告)号: US12099920B2公开(公告)日: 2024-09-24
- 发明人: Junichi Suzuki
- 申请人: RENESAS ELECTRONICS CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人: RENESAS ELECTRONICS CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Rimon P.C.
- 优先权: JP 20070703 2020.04.10
- 主分类号: G11C7/06
- IPC分类号: G11C7/06 ; G06N3/04 ; G06N3/065 ; G11C11/54 ; G11C16/04
摘要:
A first voltage application circuit applies a first voltage determined to have a first voltage value to a first wiring connected to an asymmetrical memory cell. A second voltage application circuit applies a second voltage determined to have a second voltage value to a second wiring connected to the asymmetrical memory cell. When receiving a first input value from a first terminal, a voltage control circuit fixes the second voltage value and changes the first voltage value with a positive inclination with respect to the first input value within a range equal to or higher than the second voltage value. When receiving a second input value from a second terminal, the voltage control circuit fixes the first voltage value and changes the second voltage value with a negative inclination with respect to the second input value within a range equal to or lower than the first voltage value.
公开/授权文献
- US20210319301A1 SEMICONDUCTOR DEVICE 公开/授权日:2021-10-14
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