- 专利标题: High conductance inner shield for process chamber
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申请号: US16664117申请日: 2019-10-25
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公开(公告)号: US12100577B2公开(公告)日: 2024-09-24
- 发明人: Sarath Babu , Ananthkrishna Jupudi , Yueh Sheng Ow , Junqi Wei , Kelvin Boh , Yuichi Wada , Kang Zhang
- 申请人: APPLIED MATERIALS, INC.
- 申请人地址: US CA Santa Clara
- 专利权人: APPLIED MATERIALS, INC.
- 当前专利权人: APPLIED MATERIALS, INC.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Moser Taboa
- 主分类号: H01J37/32
- IPC分类号: H01J37/32
摘要:
Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes a tubular body having a central opening configured to surround a substrate support, wherein sidewalls of the tubular body do not include any through holes; and a top plate coupled to an upper end of the tubular body and substantially covering the central opening, wherein the top plate has a gas inlet and has a diameter that is greater than an outer diameter of the tubular body, and wherein the tubular body extends straight down from the top plate.
公开/授权文献
- US20210066050A1 HIGH CONDUCTANCE INNER SHIELD FOR PROCESS CHAMBER 公开/授权日:2021-03-04
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