公开(公告)号：US12148629B2

公开(公告)日：2024-11-19

申请号：US18516238

申请日：2023-11-21

Applicant: Applied Materials, Inc.

Inventor： Kang Zhang ,  Junqi Wei ,  Yueh Sheng Ow ,  Kelvin Boh ,  Yuichi Wada ,  Ananthkrishna Jupudi ,  Sarath Babu

IPC: H01L21/48 ,  H01L21/02 ,  H01L21/322 ,  H01L21/50 ,  H01L21/60 ,  H01L21/67 ,  H01L21/768 ,  H01L23/00

Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

公开(公告)号：US12080522B2

公开(公告)日：2024-09-03

申请号：US16855559

申请日：2020-04-22

Applicant: APPLIED MATERIALS, INC.

Inventor： Sarath Babu ,  Ananthkrishna Jupudi ,  Yueh Sheng Ow ,  Junqi Wei ,  Kelvin Tai Ming Boh ,  Kang Zhang ,  Yuichi Wada

IPC: H01J37/32

CPC classification number: H01J37/32495 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32642 ,  H01J37/32651

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber, includes: a top plate having a central recess disposed in an upper surface thereof; a channel extending from an outer portion of the top plate to the central recess; a plurality of holes disposed through the top plate from a bottom surface of the recess to a lower surface of the top plate; a cover plate configured to be coupled to the top plate and to form a seal along a periphery of the central recess such that the covered recess forms a plenum within the top plate; and a tubular body extending down from the lower surface of the top plate and surrounding the plurality of holes, the tubular body further configured to surround a substrate support.

公开(公告)号：US11913107B2

公开(公告)日：2024-02-27

申请号：US16677891

申请日：2019-11-08

Applicant: APPLIED MATERIALS, INC.

Inventor： Yueh Sheng Ow ,  Yuichi Wada ,  Junqi Wei ,  Kang Zhang ,  Kelvin Boh

IPC: C23C14/16 ,  C23C14/02 ,  H01L23/00 ,  H01J37/32 ,  H01J37/34

CPC classification number: C23C14/021 ,  C23C14/16 ,  H01J37/32082 ,  H01J37/3426 ,  H01L24/03 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335 ,  H01L2224/0381 ,  H01L2224/03826

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate can includes selectively etching from a substrate disposed in the PVD chamber an exposed first layer of material, covering an underlying second layer of material, and adjacent to an exposed third layer of material, using both process gas ions and metal ions formed from a target of the PVD chamber, in an amount sufficient to expose the second layer of material while simultaneously depositing a layer of metal onto the third layer of material; and subsequently depositing metal from the target onto the second layer of material.

公开(公告)号：USD971167S1

公开(公告)日：2022-11-29

申请号：US29778108

申请日：2021-04-10

Applicant: APPLIED MATERIALS, INC.

Designer： Sarath Babu ,  Ananthkrishna Jupudi ,  Yueh Sheng Ow ,  Junqi Wei ,  Kelvin Boh ,  Yuichi Wada ,  Kang Zhang

公开(公告)号：USD973609S1

公开(公告)日：2022-12-27

申请号：US29732229

申请日：2020-04-22

Applicant: APPLIED MATERIALS, INC.

Designer： Sarath Babu ,  Ananthkrishna Jupudi ,  Yueh Sheng Ow ,  Junqi Wei ,  Kelvin Tai Ming Boh ,  Kang Zhang ,  Yuichi Wada

公开(公告)号：US11289357B2

公开(公告)日：2022-03-29

申请号：US16550521

申请日：2019-08-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Yuichi Wada ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Clinton Goh ,  Kai Liang Liew ,  Sarath Babu

IPC: H01L21/683

Abstract: Methods and apparatus for increasing voltage breakdown levels of an electrostatic chuck in a process chamber. A soft anodization layer with a thickness of greater than zero and less than approximately 10 microns is formed on an aluminum base of the electrostatic chuck. The soft anodization layer remains thermally elastic in a temperature range of approximately −50 degrees Celsius to approximately 100 degrees Celsius. An alumina spray coating is then applied on the soft anodization layer. The soft anodization layer provides thermal stress relief between the aluminum base and the alumina spray coating to reduce/eliminate cracking caused by the thermal expansion rate differences between the aluminum base and the alumina spray coating.

公开(公告)号：US11171017B2

公开(公告)日：2021-11-09

申请号：US17010961

申请日：2020-09-03

Applicant: Applied Materials, Inc.

Inventor： Zhang Kang ,  Junqi Wei ,  Yueh Sheng Ow ,  Kelvin Boh ,  Yuichi Wada ,  Ananthkrishna Jupudi ,  Sarath Babu

IPC: H01L21/48 ,  H01L21/322 ,  H01L21/02 ,  H01L23/00 ,  H01L21/768 ,  H01L21/67 ,  H01L21/50 ,  H01L21/60

Abstract: Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O2, CO, CO2, and water.

公开(公告)号：US20210066051A1

公开(公告)日：2021-03-04

申请号：US16664155

申请日：2019-10-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Sarath Babu ,  Ananthkrishna Jupudi ,  Yueh Sheng Ow ,  Junqi Wei ,  Kelvin Boh ,  Yuichi Wada ,  Kang Zhang

IPC: H01J37/32

Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes an annular ring configured to surround a substrate support; and an annular lip extending from an upper surface of the annular ring, wherein the annular ring includes a plurality of ring slots extending through the annular ring and disposed at regular intervals along the annular ring, and wherein the annular lip includes a plurality of lip slots extending through the annular lip disposed at regular intervals along the annular lip.

公开(公告)号：US10677830B2

公开(公告)日：2020-06-09

申请号：US15649600

申请日：2017-07-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Ananthkrishna Jupudi ,  Yueh Sheng Ow ,  Jacob Newman ,  Preetham Rao ,  Yuichi Wada ,  Vinodh Ramachandran

IPC: G01R29/08 ,  H01L21/67 ,  H05B6/80 ,  H05B6/64

Abstract: An apparatus for relaying microwave field intensity in a microwave cavity. In some embodiments, the apparatus comprises a microwave transparent substrate with at least one Radio Frequency (RF) detector that is capable of detecting a microwave field and generating a signal associated with a field intensity of the detected microwave field and a transmitter that receives the signal associated with the detected microwave field from the RF detector and transmits or stores information about the detected microwave field intensity. In some embodiments, the apparatus relays the microwave intensity via a wired, wireless, or optical transmitter located in proximity of the RF detector.

公开(公告)号：US11881385B2

公开(公告)日：2024-01-23

申请号：US16857828

申请日：2020-04-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Yueh Sheng Ow ,  Yuichi Wada ,  Junqi Wei ,  Kang Zhang ,  Ananthkrishna Jupudi ,  Sarath Babu ,  Kok Seong Teo ,  Kok Wei Tan

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32495 ,  H01J37/32504 ,  H01L21/67028 ,  H01J2237/335

Abstract: Apparatus and methods use a unique process kit to protect a processing volume of a process chamber. The process kit includes a shield with a frame configured to be insertable into a shield and a foil liner composed of a metallic material that is attachable to the frame at specific points. The specific attachment points are spaced apart to produce an amount of flexibility based on a malleability of the metallic material. The amount of flexibility ranges from approximately 2.5 to approximately 4.5.