Invention Grant
- Patent Title: Nitride semiconductor structure, nitride semiconductor device, and method for fabricating the device
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Application No.: US17767293Application Date: 2020-10-08
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Publication No.: US12100936B2Publication Date: 2024-09-24
- Inventor: Toshiyuki Takizawa
- Applicant: Panasonic Intellectual Property Management Co., Ltd.
- Applicant Address: JP Osaka
- Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
- Current Assignee Address: JP Osaka
- Agency: Rimon P.C.
- Priority: JP 19186371 2019.10.09
- International Application: PCT/JP2020/038155 2020.10.08
- International Announcement: WO2021/070910A 2021.04.15
- Date entered country: 2022-04-07
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L21/02 ; H01L33/18 ; H01S5/327
Abstract:
A nitride semiconductor structure includes a Group III nitride semiconductor portion and a Group II-IV nitride semiconductor portion. The Group III nitride semiconductor portion is single crystalline. The Group III nitride semiconductor portion has a predetermined crystallographic plane. The Group II-IV nitride semiconductor portion is provided on the predetermined crystallographic plane of the Group III nitride semiconductor portion. The Group II-IV nitride semiconductor portion is single crystalline. The Group II-IV nitride semiconductor portion contains a Group II element and a Group IV element. The Group II-IV nitride semiconductor portion forms a heterojunction with the Group III nitride semiconductor portion. The predetermined crystallographic plane is a crystallographic plane other than a (0001) plane.
Public/Granted literature
- US20220367748A1 NITRIDE SEMICONDUCTOR STRUCTURE, NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING THE DEVICE Public/Granted day:2022-11-17
Information query
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