- Patent Title: Semiconductor device using transistors having low off-state current
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Application No.: US17914845Application Date: 2021-04-06
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Publication No.: US12106823B2Publication Date: 2024-10-01
- Inventor: Takeya Hirose , Seiichi Yoneda , Takayuki Ikeda , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP 20073841 2020.04.17 JP 20076478 2020.04.23
- International Application: PCT/IB2021/052826 2021.04.06
- International Announcement: WO2021/209858A 2021.10.21
- Date entered country: 2022-09-27
- Main IPC: G11C7/16
- IPC: G11C7/16 ; G11C11/40 ; G11C27/02 ; H01L29/786 ; G11C11/54

Abstract:
A semiconductor device capable of holding analog data is provided. Two holding circuits, two bootstrap circuits, and one source follower circuit are formed with use of four transistors and two capacitors. A memory node is provided in each of the two holding circuits; a data potential is written to one of the memory nodes and a reference potential is written to the other of the memory nodes. At the time of data reading, the potential of the one memory node is increased in one of the bootstrap circuits, and the potential of the other memory node is increased in the other of the bootstrap circuits. A potential difference between the two memory nodes is output by the source follower circuit. With use of the source follower circuit, the output impedance can be reduced.
Public/Granted literature
- US20230147770A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-05-11
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