- 专利标题: Semiconductor device using transistors having low off-state current
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申请号: US17914845申请日: 2021-04-06
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公开(公告)号: US12106823B2公开(公告)日: 2024-10-01
- 发明人: Takeya Hirose , Seiichi Yoneda , Takayuki Ikeda , Shunpei Yamazaki
- 申请人: Semiconductor Energy Laboratory Co., Ltd.
- 申请人地址: JP Atsugi
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi
- 代理机构: Robinson Intellectual Property Law Office, P.C.
- 代理商 Eric J. Robinson
- 优先权: JP 20073841 2020.04.17 JP 20076478 2020.04.23
- 国际申请: PCT/IB2021/052826 2021.04.06
- 国际公布: WO2021/209858A 2021.10.21
- 进入国家日期: 2022-09-27
- 主分类号: G11C7/16
- IPC分类号: G11C7/16 ; G11C11/40 ; G11C27/02 ; H01L29/786 ; G11C11/54
摘要:
A semiconductor device capable of holding analog data is provided. Two holding circuits, two bootstrap circuits, and one source follower circuit are formed with use of four transistors and two capacitors. A memory node is provided in each of the two holding circuits; a data potential is written to one of the memory nodes and a reference potential is written to the other of the memory nodes. At the time of data reading, the potential of the one memory node is increased in one of the bootstrap circuits, and the potential of the other memory node is increased in the other of the bootstrap circuits. A potential difference between the two memory nodes is output by the source follower circuit. With use of the source follower circuit, the output impedance can be reduced.
公开/授权文献
- US20230147770A1 SEMICONDUCTOR DEVICE 公开/授权日:2023-05-11
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