Invention Grant
- Patent Title: Plasma processing apparatus and method of manufacturing semiconductor device using the same
-
Application No.: US17528321Application Date: 2021-11-17
-
Publication No.: US12106945B2Publication Date: 2024-10-01
- Inventor: Siqing Lu , Cheonkyu Lee , Takafumi Noguchi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Muir Patent Law, PLLC
- Priority: KR 20180154689 2018.12.04
- Main IPC: H01J37/32
- IPC: H01J37/32 ; C23C14/54 ; C23C16/458 ; C23C16/46 ; H01L21/67
Abstract:
A plasma processing apparatus includes a process chamber, a substrate support chuck configured to support a substrate in the process chamber, the substrate support chuck including an upper cooling channel and a lower cooling channel that are symmetrically separated from each other, and a support chuck temperature controller configured to supply a first coolant to the upper cooling channel and to supply a second coolant to the lower cooling channel.
Public/Granted literature
- US20220076931A1 PLASMA PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME Public/Granted day:2022-03-10
Information query
