Embodiments disclosed herein include a semiconductor structure for reducing contact to contact shorting. The semiconductor structure may include a gate cut region with a liner and a dielectric core confined within a first lateral side of the liner and a second lateral side of the liner. The semiconductor structure may also include a first source/drain (S/D) contact overlapping the first lateral side and the dielectric core. The first S/D may include a line-end that contacts the second lateral side of the liner.