Non-volatile memory cells are programmed by pre-charging channels of unselected non-volatile memory cells connected to a selected data word line, boosting the channels of unselected non-volatile memory cells connected to the selected data word line after the pre-charging and applying a program voltage pulse to selected non-volatile memory cells connected to the selected data word line while boosting. The pre-charging includes applying pre-charge voltages to one set of data word lines and dummy word line(s) as well as applying overdrive voltages to another set of data word lines connected to already programmed memory cells. At the end of the pre-charging, the dummy word lines are ramped down to a resting voltage prior to lowering the data word lines to one or more resting voltages.