Invention Grant
- Patent Title: Semiconductor structure and method for manufacturing the same
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Application No.: US17456009Application Date: 2021-11-22
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Publication No.: US12112973B2Publication Date: 2024-10-08
- Inventor: Tao Li
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN 2011149559.2 2020.10.23
- Main IPC: H01L21/762
- IPC: H01L21/762 ; H01L21/285
Abstract:
The embodiment of the present invention provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises: a substrate having a trench therein; a first layer covering the bottom and the sidewall of the trench; and a second layer covering the surface of the first layer, wherein the step coverage of the second layer is different from the step coverage of the first layer. The embodiment of the invention is conducive to obtaining a multi-layer structure with preset step coverage.
Public/Granted literature
- US20220130716A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2022-04-28
Information query
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