Invention Grant
- Patent Title: Method for efficiently eliminating graphene wrinkles formed by chemical vapor deposition
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Application No.: US17416525Application Date: 2019-12-24
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Publication No.: US12116281B2Publication Date: 2024-10-15
- Inventor: Libo Gao , Guowen Yuan , Jie Xu
- Applicant: NANJING UNIVERSITY
- Applicant Address: CN Jiangsu
- Assignee: NANJING UNIVERSITY
- Current Assignee: NANJING UNIVERSITY
- Current Assignee Address: CN Jiangsu
- Agency: JCIP GLOBAL INC.
- Priority: CN 1910125659.2 2019.02.20
- International Application: PCT/CN2019/127803 2019.12.24
- International Announcement: WO2020/168819A 2020.08.27
- Date entered country: 2021-06-21
- Main IPC: C23C16/50
- IPC: C23C16/50 ; C01B32/186 ; C01B32/194 ; C23C16/26 ; C23C16/46 ; C23C16/52 ; H01J37/32

Abstract:
A method for efficiently eliminating graphene wrinkles formed by chemical vapor deposition includes: directly growing super smooth wrinkle-free graphene films on metal substrates such as copper, nickel and alloys thereof and non-metal substrates such as silicon oxide and silicon carbide, or eliminating the wrinkles of wrinkled graphene through controlled proton injection at a high temperature by precisely controlling the temperature and hydrogen plasma power and time for generating protons; where the plasma-assisted chemical vapor deposition system includes a plasma generator, a vacuum system and a heating system; where the power of the plasma generator is 5 to 1000 W, the pressure of the vacuum system is 10−5 to 105 Pa, and the heating temperature of the system is controllable between 25 to 1000° C.; directly growing a super smooth wrinkle-free graphene by injecting protons on various substrates during growth.
Public/Granted literature
- US20220081300A1 METHOD FOR EFFICIENTLY ELIMINATING GRAPHENE WRINKLES FORMED BY CHEMICAL VAPOR DEPOSITION Public/Granted day:2022-03-17
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