公开(公告)号：US20230079680A1

公开(公告)日：2023-03-16

申请号：US17829679

申请日：2022-06-01

申请人： Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

发明人： Keunwook SHIN ,  Kibum KIM ,  Kyung-Eun BYUN ,  Hyeonjin SHIN ,  Minhyun LEE ,  Changseok LEE

IPC分类号： C01B32/186 ,  C01B32/188 ,  H01L29/41 ,  H01L29/40

摘要： Provided are a wiring including a graphene layer and a method of manufacturing the wiring. The method may include growing a graphene layer on a substrate and doping the graphene layer with a metal. The graphene layer may be grown using a plasma of a hydrocarbon at a temperature of about 200° C. to about 600° C. by plasma enhanced chemical vapor deposition (PECVD).

公开(公告)号：US20230028773A1

公开(公告)日：2023-01-26

申请号：US17786711

申请日：2020-12-01

申请人： HeiQ Materials AG

发明人： Kyoungjun Choi ,  Hyung Gyu Park ,  Murray Height

IPC分类号： C23C16/26 ,  A41D31/102 ,  C23C16/02 ,  C23C16/56 ,  C23C14/16 ,  C23C14/34 ,  C23C14/30 ,  B32B5/02 ,  B32B9/00 ,  B32B9/04 ,  B32B7/12 ,  B32B37/12 ,  B01D71/02 ,  C01B32/186

摘要： Provided is a method for making a porous graphene layer of a thickness of less than 100 nm, including the following steps: providing a catalytically active substrate, said catalytically active substrate on its surface being provided with a plurality of catalytically inactive domains having a size essentially corresponding to the size of the pores in the resultant porous graphene layer; and chemical vapour deposition and formation of the porous graphene layer on the surface of the catalytically active substrate;. The catalytically active substrate is a copper-nickel alloy substrate with a copper content in the range of 98 to less than 99.96% by weight and a nickel content in the range of more than 0.04-2% by weight, the copper and nickel contents complementing to 100% by weight of the catalytically active substrate.

公开(公告)号：US11473192B2

公开(公告)日：2022-10-18

申请号：US17285132

申请日：2019-11-27

申请人： SHENZHEN NASO TECH CO., LTD.

发明人： Guofang Zhong ,  Can Zhang

IPC分类号： C23C16/26 ,  C23C16/02 ,  C23C16/52 ,  C23C16/56 ,  C01B32/15 ,  C01B32/182 ,  C01B32/158 ,  C01B32/186 ,  C01B32/184

摘要： The invention discloses equipment and preparation method for open and continuous growth of a carbon nanomaterial. The equipment comprises a metal foil tape feeding system, a CVD system and a collection system. The method includes continuously conveying a metal foil tape pretreated or not into the CVD system via the metal foil tape feeding system, depositing a required carbon nanomaterial on the surface of the metal foil tape by CVD, directly collecting by the collection system or directly post-treating the carbon nanomaterial by a post-treatment system, and even directly producing a end product of the carbon nanomaterial. All the systems in the invention are arranged in the open atmosphere rather than an air-isolated closed space. The invention can realize round-the-clock continuous operation to greatly improve the production efficiency of carbon nanomaterials.

公开(公告)号：US11472708B2

公开(公告)日：2022-10-18

申请号：US16961322

申请日：2019-01-10

申请人： Paragraf Limited

发明人： Simon Thomas ,  Ivor Guiney

IPC分类号： C01B32/186 ,  C01B32/194 ,  C23C16/26 ,  C23C16/455 ,  C23C16/56 ,  C30B25/18 ,  C30B29/02 ,  C30B33/04 ,  G01R33/07 ,  H01L43/14

摘要： A method for the production of a graphene layer structure having from 1 to 100 graphene layers, the method comprising providing a substrate having a thermal resistance equal to or greater than that of sapphire, on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form graphene on the substrate, wherein the inlets are cooled to less than 100° C., preferably 50 to 60° C., and the susceptor is heated to a temperature of at least 50° C. in excess of a decomposition temperature of the precursor, using a laser to selectively ablate graphene from the substrate, wherein the laser has a wavelength in excess of 600 nm and a power of less than 50 Watts.

公开(公告)号：US20220243317A1

公开(公告)日：2022-08-04

申请号：US17727053

申请日：2022-04-22

申请人： Imam Abdulrahman Bin Faisal University

发明人： Ahmed A. MAAROUF ,  Khaled Abdelsabour Mohamed ELSAYED

IPC分类号： C23C16/01 ,  H01G9/20 ,  C23C16/26 ,  C23C16/02 ,  C23C16/34 ,  B82Y30/00 ,  C01B32/186 ,  H01L31/0224

摘要： A transparent electrode with a transparent substrate and a composite layer disposed thereon, wherein the composite layer includes a graphene layer and a plurality of nanoparticles, wherein the nanoparticles are embedded in the graphene layer and extend through a thickness of the graphene layer, and wherein the plurality of nanoparticles are in direct contact with the transparent substrate and a gap is present between the graphene layer and the transparent substrate.

公开(公告)号：US20220204348A1

公开(公告)日：2022-06-30

申请号：US17696899

申请日：2022-03-17

申请人： ZHEJIANG UNIVERSITY

发明人： Chao Gao ,  Li Peng ,  Lingfei Li ,  Wenzhang Fang ,  Yingjun Liu

IPC分类号： C01B32/186 ,  H01L31/028

摘要： A weakly coupled enhanced graphene film includes an enhanced graphene structure based on weak coupling, wherein the enhanced graphene structure based on weak coupling comprises a plurality of graphene units stacked vertically; the graphene unit is a single graphene sheet, or consists of two or more graphene sheets stacked in AB form; two vertically adjacent graphene units are weakly coupled, to promote the hot electron transition and increase the joint density of states, thereby increasing the number of hot electrons in high-energy states; the stacking direction of the graphene units in the graphene structure is in the thickness direction of the graphene film; and the graphene film enhances the accumulation of hot electrons in high-energy states by the enhanced graphene structure based on weak coupling.

公开(公告)号：US20220088566A1

公开(公告)日：2022-03-24

申请号：US17310360

申请日：2019-02-01

申请人： UNIVERSITY OF PRETORIA

发明人： Patricia Forbes ,  Genna-Leigh Schoonraad

IPC分类号： B01J20/20 ,  B01J19/00 ,  B01J19/14 ,  C01B32/186 ,  B01J20/28

摘要： The invention provides a system for manufacturing graphene wool which includes a receptacle, a graphene growth substrate locatable inside the receptacle, a heating device for increasing the temperature inside the receptacle, an inlet gas flow communication with the receptacle for controlling the introduction of gaseous substances into the receptacle, and a cooling device for rapidly decreasing the temperature inside the receptacle. The invention extends to a method for manufacturing graphene wool and to an air pollutant trap which includes: a sorbent, and a housing for housing the sorbent, wherein the sorbent includes graphene.

公开(公告)号：US11245109B2

公开(公告)日：2022-02-08

申请号：US15831424

申请日：2017-12-05

申请人： National Cheng Kung University

发明人： Yon-Hua Tzeng ,  Yen-Ting Pan

IPC分类号： H01M4/36 ,  H01M4/62 ,  H01M4/38 ,  H01M4/134 ,  C01B32/186 ,  C01B33/02 ,  H01M10/0525 ,  H01M4/1395 ,  H01M10/052 ,  H01M4/02

摘要： A novel composite electrode material and a method for manufacturing the same, a composite electrode containing said composite electrode material, and a Li-based battery comprising said composite electrode are disclosed. Herein, the composite electrode material of the present invention comprises: a core, wherein a material of the core is at least one selected from the group consisting of Sn, Sb, Si, Ge, and compounds thereof; and a graphene nanowall or a graphene-like carbon nanowall; wherein the graphene nanowall or the graphene-like carbon nanowall grows on a surface of the core.

公开(公告)号：US11217447B2

公开(公告)日：2022-01-04

申请号：US16795841

申请日：2020-02-20

申请人： Paragraf Ltd.

发明人： Simon Charles Stewart Thomas

IPC分类号： C30B25/10 ,  H01L21/02 ,  C30B29/02 ,  C30B29/06 ,  C30B25/16 ,  C30B29/60 ,  C23C16/26 ,  C23C16/24 ,  C01B32/186 ,  C23C16/455 ,  C30B25/14 ,  C30B29/40

摘要： A method of producing graphene or other two-dimensional material such as graphene including heating the substrate held within a reaction chamber to a temperature that is within a decomposition range of a precursor, and that allows two-dimensional crystalline material formation from a species released from the decomposed precursor; establishing a steep temperature gradient (preferably >1000° C. per meter) that extends away from the substrate surface towards an inlet for the precursor; and introducing precursor through the relatively cool inlet and across the temperature gradient towards the substrate surface. The steep temperature gradient ensures that the precursor remains substantially cool until it is proximate the substrate surface thus minimizing decomposition or other reaction of the precursor before it is proximate the substrate surface. The separation between the precursor inlet and the substrate is less than 100 mm.

公开(公告)号：US11213800B2

公开(公告)日：2022-01-04

申请号：US13821136

申请日：2011-09-13

申请人： William R. Dichtel ,  Jiwoong Park ,  Arnab Mukherjee ,  Mark Philip Levendorf ,  Arthur Woll ,  Eric Spitler ,  John Colson

发明人： William R. Dichtel ,  Jiwoong Park ,  Arnab Mukherjee ,  Mark Philip Levendorf ,  Arthur Woll ,  Eric Spitler ,  John Colson

IPC分类号： C09D5/00 ,  B01J20/22 ,  H01L51/00 ,  B82Y40/00 ,  B82Y30/00 ,  B01J20/32 ,  C01B32/186 ,  C01B32/21 ,  H01L51/05 ,  H01L51/50 ,  H01L51/42

摘要： Multilayer structures comprising a covalent organic framework (COF) film in contact with a polyaromatic carbon (PAC) film. The multilayer structures can be made by combining precursor compounds in the presence of a PAC film. The PAC film can be for example, a single layer graphene film. The multilayer structures can be used in a variety of applications such as solar cells, flexible displays, lighting devices, RFID tags, sensors, photoreceptors, batteries, capacitors, gas-storage devices, and gas-separation devices.