A semiconductor device structure is provided. The semiconductor device structure includes a first dielectric layer and a first conductive feature and a second conductive feature surrounded by the first dielectric layer. The semiconductor device structure also includes a second dielectric layer over the first dielectric layer and a resistive element electrically connected to the first conductive feature. The second dielectric layer surrounds a portion of the resistive element. The semiconductor device structure further includes a conductive via electrically connected to the second conductive feature. The second dielectric layer surrounds a portion of the conductive via, and a contact area between the resistive element and the first conductive feature is wider than a contact area between the conductive via and the second conductive feature.