- 专利标题： Chip bonding method and semiconductor chip structure
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申请号： US17650851申请日： 2022-02-13
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公开(公告)号： US12119315B2公开(公告)日： 2024-10-15
- 发明人: Chih-Wei Chang
- 申请人： CHANGXIN MEMORY TECHNOLOGIES, INC.
- 申请人地址： CN Hefei
- 专利权人： CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人： CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人地址： CN Hefei
- 代理机构： Syncoda LLC
- 代理商 Feng Ma
- 优先权： CN 2110777040.7 2021.07.09
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/00 ; H01L23/48 ; H01L25/065
摘要：
A chip bonding method includes the following operations. A first chip is provided, which includes a first contact pad including a first portion lower than a first surface of a first substrate and a second portion higher than the first surface of the first substrate to form the stepped first contact pad. A second chip is provided, which includes a second contact pad including a third portion lower than a third surface of a second substrate and a fourth portion higher than the third surface of the second substrate to form the stepped second contact pad. The first chip and the second chip are bonded. The first portion of the first chip contacts with the fourth portion of the second chip, and the second portion of the first chip contacts with the third portion of the second chip.
公开/授权文献
- US20230011840A1 CHIP BONDING METHOD AND SEMICONDUCTOR CHIP STRUCTURE 公开/授权日：2023-01-12
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