Invention Grant
- Patent Title: Package comprising a substrate with high density interconnects
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Application No.: US17479691Application Date: 2021-09-20
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Publication No.: US12125742B2Publication Date: 2024-10-22
- Inventor: Hyunchul Cho , Kun Fang , Jaehyun Yeon , Suhyung Hwang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM INCORPORATED
- Current Assignee: QUALCOMM INCORPORATED
- Current Assignee Address: US CA San Diego
- Agency: Loza & Loza, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/48 ; H01L21/56 ; H01L23/00 ; H01L23/498
Abstract:
A package that includes a substrate, a first integrated device coupled to a first surface of the substrate, and a second integrated device coupled to a second surface of the substrate. The substrate includes at least one dielectric layer, a first plurality of high-density interconnects located in the at least one dielectric layer and through a first surface of the at least one dielectric layer; a second plurality of high-density interconnects located in the at least one dielectric.
Public/Granted literature
- US20230093681A1 PACKAGE COMPRISING A SUBSTRATE WITH HIGH DENSITY INTERCONNECTS Public/Granted day:2023-03-23
Information query
IPC分类:
