- 专利标题： In-circuit detection of early failure of power switch transistors in switching power converters
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申请号： US17579308申请日： 2022-01-19
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公开(公告)号： US12126253B2公开(公告)日： 2024-10-22
- 发明人: Wenduo Liu
- 申请人： DIALOG SEMICONDUCTOR INC.
- 申请人地址： US CA Campbell
- 专利权人： DIALOG SEMICONDUCTOR INC.
- 当前专利权人： DIALOG SEMICONDUCTOR INC.
- 当前专利权人地址： US CA Campbell
- 代理机构： .Haynes and Boone, LLP
- 主分类号： H02M1/32
- IPC分类号： H02M1/32 ; H02M1/08 ; H02M1/44 ; H02M3/335 ; H03K17/18
摘要：
A failure detection circuit for a power switch transistor in a power switching converter is provided that compares a drive voltage for driving a gate of the power switch transistor to a plurality of thresholds. Based upon when the drive voltage crosses each threshold in the plurality of thresholds, a logic circuit determines whether a fault condition exists for the power switch transistor.
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