- 专利标题: Semiconductor structure and semiconductor structure manufacturing method
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申请号: US17651108申请日: 2022-02-15
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公开(公告)号: US12127395B2公开(公告)日: 2024-10-22
- 发明人: Yuhan Zhu , Chuxian Liao , Zhan Ying
- 申请人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 申请人地址: CN Hefei
- 专利权人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人: CHANGXIN MEMORY TECHNOLOGIES, INC.
- 当前专利权人地址: CN Hefei
- 代理机构: Kilpatrick Townsend & Stockton LLP
- 优先权: CN 2010962377.0 2020.09.14
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H10B12/00
摘要:
Embodiments of the present application provide a semiconductor structure and a semiconductor structure manufacturing method. The semiconductor structure includes: a wordline; and a first bitline and a second bitline located on two sides of the wordline and a first memory structure and a second memory structure located on the two sides of the wordline. The first bitline and the second bitline are connected to the first memory structure and the second memory structure respectively through a transistor. An extension direction of the first bitline is perpendicular to an extension direction of the wordline.
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