- 专利标题： Method for producing octahedron transition metal dichalcogenides using plasma
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申请号： US17232450申请日： 2021-04-16
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公开(公告)号： US12129547B2公开(公告)日： 2024-10-29
- 发明人: Taesung Kim , Hyunho Seok , Jaehyun Lee , Hyeong U Kim , Kanade Vinit
- 申请人： Research & Business Foundation Sungkyunkwan University , Ajou University Industry-Academic Cooperation Foundation
- 申请人地址： KR Suwon-si
- 专利权人： Research & Business Foundation Sungkyunkwan University,AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
- 当前专利权人： Research & Business Foundation Sungkyunkwan University,AJOU UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
- 当前专利权人地址： KR Suwon-si; KR Suwon-si
- 代理机构： NSIP Law
- 优先权： KR 20200045904 2020.04.16
- 主分类号： C23C16/00
- IPC分类号： C23C16/00 ; C23C16/06 ; C23C16/455
摘要：
The present disclosure relates to a method of producing octahedral transition metal dichalcogenides, including forming a transition metal layer on a substrate and injecting a chalcogenide-containing gas onto the substrate, on which the transition metal layer has been formed, together with a plasma treatment.
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