Invention Grant
- Patent Title: Graphene structure and method of forming the graphene structure
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Application No.: US16923478Application Date: 2020-07-08
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Publication No.: US12131905B2Publication Date: 2024-10-29
- Inventor: Keunwook Shin , Kyungeun Byun , Hyeonjin Shin , Soyoung Lee , Changseok Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: HARNESS, DICKEY & PIERCE, P.L.C.
- Priority: KR 20200001570 2020.01.06
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/26 ; C23C16/50 ; H01L29/16
Abstract:
A graphene structure and a method of forming the graphene structure are provided. The graphene structure includes directly grown graphene that is directly grown on a surface of a substrate and has controlled surface energy.
Public/Granted literature
- US20210210346A1 GRAPHENE STRUCTURE AND METHOD OF FORMING THE GRAPHENE STRUCTURE Public/Granted day:2021-07-08
Information query
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