The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes: a base, the base including a substrate and a first heat dissipation structure located in the substrate, heat conductivity of the first heat dissipation structure being higher than that of the substrate, the substrate including an upper surface and a lower surface opposite to each other, and a surface of the first heat dissipation structure being exposed on the upper surface of the substrate; a second heat dissipation structure, the second heat dissipation structure being at least located on an upper surface of the first heat dissipation structure; and a through silicon via (TSV) structure, the TSV structure penetrating through an entire thickness of the second heat dissipation structure and extending into the base, the second heat dissipation structure surrounding the TSV structure, and the first heat dissipation structure surrounding the TSV structure.