Invention Grant
- Patent Title: Integrated circuit device and fabrication method thereof
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Application No.: US17408505Application Date: 2021-08-23
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Publication No.: US12132011B2Publication Date: 2024-10-29
- Inventor: Purakh Raj Verma , Kuo-Yuh Yang , Chia-Huei Lin , Chu-Chun Chang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN 2010447437.5 2020.05.25
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/31 ; H01L23/522

Abstract:
An integrated circuit device includes a substrate; an integrated circuit region on the substrate, said integrated circuit region comprising a dielectric stack; a seal ring disposed in said dielectric stack and around a periphery of the integrated circuit region; a trench around the seal ring and exposing a sidewall of the dielectric stack; and a moisture blocking layer continuously covering the integrated circuit region and extending to the sidewall of the dielectric stack, thereby sealing a boundary between two adjacent dielectric films in the dielectric stack.
Public/Granted literature
- US20210384146A1 INTEGRATED CIRCUIT DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2021-12-09
Information query
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