- 专利标题: Pumping capacitor and semiconductor memory device including the same
-
申请号: US17683562申请日: 2022-03-01
-
公开(公告)号: US12133372B2公开(公告)日: 2024-10-29
- 发明人: Yooseok Yang , Jongwook Park
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR 20210115322 2021.08.31
- 主分类号: G11C11/34
- IPC分类号: G11C11/34 ; G11C5/10 ; G11C5/14 ; H01L49/02 ; H10B12/00
摘要:
A pumping capacitor is provided. The pumping capacitor includes: first, second, third and fourth electrodes that are separately formed on a substrate; a first pumping capacitor group, wherein i first cell capacitors have lower electrodes formed on the first pad electrode and upper electrodes connected to a plate electrode, and (n−i) first cell capacitors have lower electrodes formed on the second pad electrode and upper electrodes connected to the plate electrode; and a second pumping capacitor group, wherein i second cell capacitors have lower electrodes formed on the fourth pad electrode and upper electrodes connected to the plate electrode, and (n−i) second cell capacitors have lower electrodes formed on the third pad electrode and upper electrodes connected to the plate electrode. The first pumping capacitor group and the second pumping capacitor group are connected in series, and the second pad electrode and the third pad electrode are floated.
公开/授权文献
信息查询