Semiconductor integrated circuit device and method of manufacturing semiconductor integrated circuit device
Abstract:
A standard cell includes: a gate interconnect; a dummy gate interconnect formed to be adjacent to the gate interconnect on the right side of the gate interconnect in the figure in the X direction; a pad provided between the gate interconnect and the dummy gate interconnect; a nanosheet formed to overlap the gate interconnect as viewed in plan and connected with the pad; and a dummy nanosheet formed to overlap the dummy gate interconnect as viewed in plan and connected with the pad.
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