Invention Grant
- Patent Title: Semiconductor integrated circuit device and method of manufacturing semiconductor integrated circuit device
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Application No.: US17706117Application Date: 2022-03-28
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Publication No.: US12142606B2Publication Date: 2024-11-12
- Inventor: Junji Iwahori
- Applicant: Socionext Inc.
- Applicant Address: JP Kanagawa
- Assignee: Socionext Inc.
- Current Assignee: Socionext Inc.
- Current Assignee Address: JP Kanagawa
- Agency: Rimon P.C.
- Priority: JP2019-182406 20191002
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8234 ; H01L29/06 ; H01L29/423

Abstract:
A standard cell includes: a gate interconnect; a dummy gate interconnect formed to be adjacent to the gate interconnect on the right side of the gate interconnect in the figure in the X direction; a pad provided between the gate interconnect and the dummy gate interconnect; a nanosheet formed to overlap the gate interconnect as viewed in plan and connected with the pad; and a dummy nanosheet formed to overlap the dummy gate interconnect as viewed in plan and connected with the pad.
Public/Granted literature
Information query
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