Invention Grant
- Patent Title: Semiconductor device
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Application No.: US18134582Application Date: 2023-04-14
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Publication No.: US12154981B2Publication Date: 2024-11-26
- Inventor: Po-Yu Yang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN202110034669.2 20210112
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/20 ; H01L29/40 ; H01L29/423 ; H01L29/66
Abstract:
A semiconductor device includes a substrate, a semiconductor channel layer, a semiconductor barrier layer, and a gate electrode. The semiconductor channel layer is disposed on the substrate, and the semiconductor barrier layer is disposed on the semiconductor channel layer, where the surface of the semiconductor barrier layer includes at least one recess. The gate electrode is disposed on the semiconductor barrier layer and includes a body portion and at least one vertical extension portion overlapping the recess.
Public/Granted literature
- US20230253489A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-08-10
Information query
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