Invention Grant
- Patent Title: Display panel driven by a thin film transistor including a silicon semiconductor and a thin film transistor including an oxide semiconductor
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Application No.: US18096623Application Date: 2023-01-13
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Publication No.: US12167641B2Publication Date: 2024-12-10
- Inventor: Sewan Son , Moosoon Ko , Seokje Seong , Seongjun Lee , Jeongsoo Lee , Jiseon Lee , Changho Yi , Hyeri Cho
- Applicant: Samsung Display Co., Ltd.
- Applicant Address: KR Yongin-Si
- Assignee: Samsung Display Co., Ltd.
- Current Assignee: Samsung Display Co., Ltd.
- Current Assignee Address: KR Yongin-Si
- Agency: Innovation Counsel LLP
- Priority: KR10-2020-0022373 20200224
- Main IPC: H10K59/12
- IPC: H10K59/12 ; H10K59/121 ; H10K59/126 ; H10K59/131 ; G09G3/3258 ; H01L27/12 ; H10K59/124

Abstract:
A display panel includes a substrate, a first thin film transistor including a first semiconductor layer and a first gate electrode, a data line extending in a first direction, a scan line extending in a second direction, a second thin film transistor electrically connected to the data line and including a second semiconductor layer and a second gate electrode, a third thin film transistor including a third semiconductor layer and a first upper gate electrode arranged on the third semiconductor layer, a node connection line electrically connecting the first thin film transistor and the third thin film transistor, and a shield line located between the data line and the node connection line in a plan view and including the same material as the first upper gate electrode of the third thin film transistor. The first semiconductor layer includes a silicon semiconductor, and the third semiconductor layer includes an oxide semiconductor.
Public/Granted literature
- US20230157074A1 DISPLAY PANEL Public/Granted day:2023-05-18
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