Abstract:
A display device includes pixels, and each pixel is connected between a first electrode or a second electrode of a driving transistor and a bias line, includes a bias transistor configured to transfer a bias voltage applied from the bias line to the first electrode or the second electrode of the driving transistor during a bias period. Bias voltages applied to the pixels emitting light of different colors are different from each other.
Abstract:
A thin-film transistor (TFT) array substrate includes: a driving TFT provided on a substrate; and a switching TFT provided on the substrate and including: a switching semiconductor layer including a switching channel region, a switching source region, and a switching drain region; and a switching source electrode and a switching drain electrode contacting the switching semiconductor layer. The switching source electrode includes a source contact portion contacting the switching source region, and the switching drain electrode includes a drain contact portion contacting the switching drain region. The source contact portion is doped with ions that are different from ions of the switching source region and the drain contact portion is doped with ions that are different from ions of the switching drain region.
Abstract:
A display panel includes a substrate, a first thin film transistor including a first semiconductor layer and a first gate electrode, a data line extending in a first direction, a scan line extending in a second direction, a second thin film transistor electrically connected to the data line and including a second semiconductor layer and a second gate electrode, a third thin film transistor including a third semiconductor layer and a first upper gate electrode arranged on the third semiconductor layer, a node connection line electrically connecting the first thin film transistor and the third thin film transistor, and a shield line located between the data line and the node connection line in a plan view and including the same material as the first upper gate electrode of the third thin film transistor. The first semiconductor layer includes a silicon semiconductor, and the third semiconductor layer includes an oxide semiconductor.
Abstract:
A display panel includes a substrate, a first thin film transistor including a first semiconductor layer and a first gate electrode, a data line extending in a first direction, a scan line extending in a second direction, a second thin film transistor electrically connected to the data line and including a second semiconductor layer and a second gate electrode, a third thin film transistor including a third semiconductor layer and a first upper gate electrode arranged on the third semiconductor layer, a node connection line electrically connecting the first thin film transistor and the third thin film transistor, and a shield line located between the data line and the node connection line in a plan view and including the same material as the first upper gate electrode of the third thin film transistor. The first semiconductor layer includes a silicon semiconductor, and the third semiconductor layer includes an oxide semiconductor.
Abstract:
A display panel includes a substrate, a first thin film transistor including a first semiconductor layer and a first gate electrode, a data line extending in a first direction, a scan line extending in a second direction, a second thin film transistor electrically connected to the data line and including a second semiconductor layer and a second gate electrode, a third thin film transistor including a third semiconductor layer and a first upper gate electrode arranged on the third semiconductor layer, a node connection line electrically connecting the first thin film transistor and the third thin film transistor, and a shield line located between the data line and the node connection line in a plan view and including the same material as the first upper gate electrode of the third thin film transistor. The first semiconductor layer includes a silicon semiconductor, and the third semiconductor layer includes an oxide semiconductor.
Abstract:
A display device includes pixels, and each pixel is connected between a first electrode or a second electrode of a driving transistor and a bias line, includes a bias transistor configured to transfer a bias voltage applied from the bias line to the first electrode or the second electrode of the driving transistor during a bias period. Bias voltages applied to the pixels emitting light of different colors are different from each other.
Abstract:
A display panel includes a substrate, a first thin film transistor including a first semiconductor layer and a first gate electrode, a data line extending in a first direction, a scan line extending in a second direction, a second thin film transistor electrically connected to the data line and including a second semiconductor layer and a second gate electrode, a third thin film transistor including a third semiconductor layer and a first upper gate electrode arranged on the third semiconductor layer, a node connection line electrically connecting the first thin film transistor and the third thin film transistor, and a shield line located between the data line and the node connection line in a plan view and including the same material as the first upper gate electrode of the third thin film transistor. The first semiconductor layer includes a silicon semiconductor, and the third semiconductor layer includes an oxide semiconductor.
Abstract:
A pixel including: a light-emitting diode; a first PMOS transistor including a first electrode connected to a node and a second electrode transmitting a driving current to the light-emitting diode; a second transistor connected between a data line and the node and turned on by a first scan signal; a third NMOS transistor connected between a gate electrode and the second electrode of the first transistor and turned on by a first emission control signal; a fourth NMOS transistor connected between the gate electrode of the first transistor and a first initialization voltage line and turned on by a second emission control signal; a fifth transistor connected between a driving voltage line and the node and turned on by the first emission control signal; and a sixth transistor connected between the second electrode of the first transistor and the light-emitting diode and turned on by the first emission control signal.
Abstract:
An OLED display and a method of manufacturing the same are disclosed. In one aspect, the display device includes a plurality of pixels, wherein each of the pixels includes a plurality of wires including a first wire extending in a first direction and a second wire extending in a second direction crossing the first direction, the second wire having top and bottom portions opposing each other. The pixels also include a plurality of switching TFTs electrically connected to the wires, a driving TFT configured to supply a driving current, a storage capacitor electrically connected to the wires and the driving TFT, and a connecting wire electrically connecting the driving TFT to a selected one of the switching TFTs, wherein the connecting wire has top and bottom portions opposing each other, and wherein at least the top portions of the connecting wire and the second wire are formed on different layers.
Abstract:
A display apparatus includes a first pixel and a second pixel adjacent to each other, wherein a first channel region of a driving transistor of the first pixel has a reverse U-shaped pattern, and a second channel region of a driving transistor of the second pixel has a pattern opposite the pattern of the first channel region.