Invention Grant
- Patent Title: High endurance persistent storage device
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Application No.: US18158426Application Date: 2023-01-23
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Publication No.: US12175088B2Publication Date: 2024-12-24
- Inventor: Madhava Krishnan Ramanathan , Naga Sanjana Bikonda , Shashwat Jain , Vishwanath Maram
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Lewis Roca Rothgerber Christie LLP
- Main IPC: G06F3/06
- IPC: G06F3/06
Abstract:
A high endurance persistent storage device. In some embodiments, the persistent storage device includes: a controller circuit; persistent storage media, connected to the controller circuit; nonvolatile memory, connected to the controller circuit; and volatile memory, connected to the controller circuit.
Public/Granted literature
- US20240134534A1 HIGH ENDURANCE PERSISTENT STORAGE DEVICE Public/Granted day:2024-04-25
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