公开(公告)号：US12175088B2

公开(公告)日：2024-12-24

申请号：US18158426

申请日：2023-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Madhava Krishnan Ramanathan ,  Naga Sanjana Bikonda ,  Shashwat Jain ,  Vishwanath Maram

IPC: G06F3/06

Abstract: A high endurance persistent storage device. In some embodiments, the persistent storage device includes: a controller circuit; persistent storage media, connected to the controller circuit; nonvolatile memory, connected to the controller circuit; and volatile memory, connected to the controller circuit.

公开(公告)号：US20240069965A1

公开(公告)日：2024-02-29

申请号：US18238254

申请日：2023-08-25

Applicant: Samsung Electronics Co., Ltd. ,  Virginia Polytechnic Institute and State University

Inventor： Madhava Krishnan Ramanathan ,  Shashwat Jain ,  Changwoo Min ,  Vishwanath Maram ,  Naga Sanjana Bikonda

IPC: G06F9/48 ,  G06F9/50

CPC classification number: G06F9/4881 ,  G06F9/5033

Abstract: Systems and methods for executing compute functions are disclosed. A processing circuit may be configured to: receive a first task from a first application, wherein the first task identifies a first compute function and a second compute function; determine a first order of execution of the first compute function and the second compute function based on first information in the first task; and execute the first compute function and the second compute function according to the first order.