- Patent Title: Non-volatile memory with different word line to word line pitches
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Application No.: US17955878Application Date: 2022-09-29
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Publication No.: US12176037B2Publication Date: 2024-12-24
- Inventor: Xiang Yang , Wei Cao , Jiacen Guo
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Addison
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Addison
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/08 ; G11C16/10 ; G11C16/24
Abstract:
In a multi-tiered non-volatile memory structure that can perform operations on sub-blocks, performance of the different tiers/sub-blocks is made consistent by using different word line to word line pitches in the different tiers/sub-blocks.
Public/Granted literature
- US20240112735A1 NON-VOLATILE MEMORY WITH DIFFERENT WORD LINE TO WORD LINE PITCHES Public/Granted day:2024-04-04
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