Invention Grant
- Patent Title: Integrated circuit structure
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Application No.: US18309181Application Date: 2023-04-28
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Publication No.: US12183791B2Publication Date: 2024-12-31
- Inventor: Jhon-Jhy Liaw
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L21/8234 ; H01L27/088 ; H01L29/417 ; H10B10/00

Abstract:
An integrated circuit (IC) structure includes a substrate and a fin structure. The substrate includes a first cell region and a second cell region abutting the first cell region. The fin structure includes a first plan-view profile within the first cell region and a second plan-view profile within the second cell region. The first plan-view profile includes a first sidewall and a second sidewall opposing the first sidewall. The second plan-view profile includes a third sidewall and a fourth sidewall opposing the third sidewall. A width between the first sidewall and the second sidewall is greater than a width between the third sidewall and the fourth sidewall.
Public/Granted literature
- US20230261053A1 INTEGRATED CIRCUIT STRUCTURE Public/Granted day:2023-08-17
Information query
IPC分类: