Invention Grant
- Patent Title: SiC composite substrate and composite substrate for semiconductor device
-
Application No.: US17445617Application Date: 2021-08-23
-
Publication No.: US12183792B2Publication Date: 2024-12-31
- Inventor: Kiyoshi Matsushima , Jun Yoshikawa , Morimichi Watanabe , Risa Miyakaze
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Nagoya
- Assignee: NGK INSULATORS, LTD.
- Current Assignee: NGK INSULATORS, LTD.
- Current Assignee Address: JP Nagoya
- Agency: BURR PATENT LAW, PLLC
- Priority: JP2019-061503 20190327
- Main IPC: H01L29/16
- IPC: H01L29/16 ; C30B29/36 ; H01L21/02
Abstract:
Provided is a SiC composite substrate including a biaxially-oriented SiC layer in which SiC is oriented in both a c-axis direction and an a-axis direction, and a SiC polycrystalline layer provided on one surface of the biaxially-oriented SiC layer. A joint interface of the biaxially-oriented SiC layer and the SiC polycrystalline layer has an uneven shape, which has an amount of unevenness of 1 to 200 μm.
Public/Granted literature
- US20210384300A1 SiC COMPOSITE SUBSTRATE AND COMPOSITE SUBSTRATE FOR SEMICONDUCTOR DEVICE Public/Granted day:2021-12-09
Information query
IPC分类:
