Invention Grant
- Patent Title: Semiconductor device
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Application No.: US18342888Application Date: 2023-06-28
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Publication No.: US12184234B2Publication Date: 2024-12-31
- Inventor: Soshiro Nishioka
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: SCULLY, SCOTT, MURPHY & PRESSER, P.C.
- Priority: JP2022-104105 20220629
- Main IPC: H03B5/36
- IPC: H03B5/36

Abstract:
A semiconductor device includes a crystal oscillator circuit, a first noise application circuit, and a second noise application circuit. The first noise application circuit is connected to the crystal oscillator circuit and is configured to drive a crystal resonator by selectively applying initial noises of opposite phases to a first external terminal and a second external terminal. The second noise application circuit applies a second noise to the first external terminal by amplifying a signal at the first external terminal and returning the amplified signal to the first external terminal, thereby driving an oscillation amplifier and a crystal resonator of the crystal oscillator circuit and shortening a start-up time of the crystal oscillator circuit.
Public/Granted literature
- US20240022211A1 SEMICONDUCTOR DEVICE Public/Granted day:2024-01-18
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