Invention Grant
- Patent Title: Integrated circuit device
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Application No.: US17649562Application Date: 2022-02-01
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Publication No.: US12185534B2Publication Date: 2024-12-31
- Inventor: Junhyoung Kim , Byunggon Park , Seungmin Lee , Kangmin Kim , Taemin Eom , Byungkwan You
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: KR10-2021-0067893 20210526
- Main IPC: H10B41/40
- IPC: H10B41/40 ; H01L23/522 ; H01L23/528 ; H01L23/532 ; H01L23/538 ; H01L23/60 ; H01L27/02 ; H10B41/10 ; H10B41/27 ; H10B41/35 ; H10B41/50 ; H10B43/10 ; H10B43/27 ; H10B43/35 ; H10B43/40 ; H10B43/50

Abstract:
An integrated circuit device includes a substrate, a peripheral wiring circuit that includes a bypass via and is disposed on the substrate, a peripheral circuit that includes an interlayer insulating layer surrounding at least a portion of the peripheral wiring circuit, and a memory cell array disposed on and overlapping the peripheral circuit. The memory cell array includes a base substrate, a plurality of gate lines disposed on the base substrate, and a plurality of channels penetrating the plurality of gate lines. The integrated circuit device further includes a barrier layer interposed between the peripheral circuit and the memory cell array. The barrier layer includes a bypass hole penetrating from a top surface to a lower surface of the barrier layer. The bypass via is disposed in the bypass hole.
Public/Granted literature
- US20220384467A1 INTEGRATED CIRCUIT DEVICE Public/Granted day:2022-12-01
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