Invention Grant
- Patent Title: Limiting hot-cold swap wear leveling
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Application No.: US17954023Application Date: 2022-09-27
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Publication No.: US12189960B2Publication Date: 2025-01-07
- Inventor: Fangfang Zhu , Ying Yu Tai , Ning Chen , Jiangli Zhu , Alex Tang
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman Lundberg & Woessner, P.A.
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F3/06 ; G06F13/00

Abstract:
Embodiments include methods, systems, devices, instructions, and media for limiting hot-cold swap wear leveling in memory devices. In one embodiment, wear metric values are stored and monitored using multiple wear leveling criteria. The multiple wear leveling criteria include a hot-cold swap wear leveling criteria, which may make use of a write count offset value. Based on a first wear metric value of a first management group and a second wear metric value of a second management group, the first management group and the second management group are selected for a wear leveling swap operation. The wear leveling swap operation is performed with a whole management group read operation of the first management group to read a set of data, and a whole management group write operation to write the set of data to the second management group.
Public/Granted literature
- US20230019910A1 LIMITING HOT-COLD SWAP WEAR LEVELING Public/Granted day:2023-01-19
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