Invention Grant
- Patent Title: Solid-state switch based high-speed pulser with plasma IEDF modification capability through multilevel output functionality
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Application No.: US18059222Application Date: 2022-11-28
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Publication No.: US12205797B2Publication Date: 2025-01-21
- Inventor: Kartik Ramaswamy , Yue Guo , Yang Yang , Fernando Silveira , A. N. M. Wasekul Azad
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: H01J37/32
- IPC: H01J37/32

Abstract:
Embodiments provided herein generally include apparatus, plasma processing systems, and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. One embodiment includes a waveform generator having three MOSFETs and three series-connected capacitors. The capacitors are connected across a DC power supply and, depending on the value of the capacitors, voltage across each of them may be varied. Each of the top two capacitors is followed by a diode. The bottom capacitor is connected to the ground. The drain terminal of each MOSFET is connected to higher potential end of the series connected capacitors. Each MOSFET is followed by a diode and the cathode ends of the diodes are connected together. An electrode is connected between the common cathode and ground.
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