Invention Grant
- Patent Title: Semiconductor device including gate contact structure formed from gate structure
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Application No.: US18615573Application Date: 2024-03-25
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Publication No.: US12211837B1Publication Date: 2025-01-28
- Inventor: Myunghoon Jung , Jaehong Lee , Seungchan Yun , Kang-ill Seo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/8234 ; H01L27/06 ; H01L27/088 ; H01L29/06 ; H01L29/423 ; H01L29/66 ; H01L29/775 ; H01L29/786

Abstract:
Provided is a semiconductor device which may include: a channel structure; a gate structure on the channel structure; and a gate contact structure on the gate structure, the gate contact structure configured to receive a gate input signal, wherein the gate contact structure is a portion of the gate structure itself, and no connection surface, interface or boundary is formed between the gate contact structure and the gate structure.
Information query
IPC分类: