Invention Grant
- Patent Title: Sorption chamber walls for semiconductor equipment
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Application No.: US17639324Application Date: 2020-08-06
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Publication No.: US12217945B2Publication Date: 2025-02-04
- Inventor: Hossein Sadeghi , Richard A. Gottscho
- Applicant: Lam Research Corporation
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: PENILLA IP, APC
- International Application: PCT/US2020/045282 WO 20200806
- International Announcement: WO2021/045867 WO 20210311
- Main IPC: B01D53/04
- IPC: B01D53/04 ; H01J37/32

Abstract:
A sorption structure used in a plasma process chamber includes an inner layer having one or more heating elements to heat the sorption structure, a middle section having a lattice structure and a coolant flow delivery network through which a coolant circulates to cool the sorption structure, and a vacuum flow network that is connected to a vacuum line to create low pressure vacuum. The lattice structure includes network of openings defined in a plurality of layers. The inner layer is disposed adjacent to the middle section and an outer layer of the lattice structure faces an interior region of the chamber. The openings in the layers of the lattice structure progressively increase in size from the inner layer to the outer layer. The lattice structure is used to adsorb by-products released in the process chamber and the vacuum flow network is used to remove the by-products.
Public/Granted literature
- US20220319821A1 SORPTION CHAMBER WALLS FOR SEMICONDUCTOR EQUIPMENT Public/Granted day:2022-10-06
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