Invention Grant
- Patent Title: Magnetically enhanced high density plasma-chemical vapor deposition plasma source for depositing diamond and diamond-like films
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Application No.: US17495730Application Date: 2021-10-06
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Publication No.: US12217949B2Publication Date: 2025-02-04
- Inventor: Bassam Hanna Abraham
- Applicant: IonQuest Corp.
- Applicant Address: US MA Milford
- Assignee: IonQuest Corp.
- Current Assignee: IonQuest Corp.
- Current Assignee Address: US MA Milford
- Agency: FisherBroyles, LLP
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/14 ; C23C14/34 ; C23C14/35

Abstract:
A method of sputtering a layer on a substrate includes positioning an HEDP magnetron in a vacuum with an anode, cathode target, magnet assembly, substrate, and feed gas; applying a plurality of unipolar negative direct current (DC) voltage pulses from a pulse power supply to a pulse converting network (PCN), wherein the PCN comprises at least one inductor and at least one capacitor; and adjusting an amplitude, pulse duration, and frequency associated with the plurality of unipolar negative DC voltage pulses and adjusting a value of at least one of the at least one inductor and the at least one capacitor, thereby causing a resonance mode associated with the PCN. The substrate is operatively coupled to ground by a first diode, thereby attracting positively charged ions sputtered from the cathode target and plasma to the substrate. A corresponding apparatus and computer-readable medium are also disclosed.
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