Invention Grant
- Patent Title: Semiconductor structure
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Application No.: US18447932Application Date: 2023-08-10
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Publication No.: US12218227B2Publication Date: 2025-02-04
- Inventor: Shih-Hao Lin , Chia-Hung Chou , Chih-Hsuan Chen , Ping-En Cheng , Hsin-Wen Su , Chien-Chih Lin , Szu-Chi Yang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/8234 ; H01L29/78

Abstract:
A semiconductor structure includes substrate, semiconductor layers, source/drain features, metal oxide layers, and a gate structure. The semiconductor layers extend in an X-direction and over the substrate. The semiconductor layers are spaced apart from each other in a Z-direction. The source/drain features are on opposite sides of the semiconductor layers in the X-direction. The metal oxide layers cover bottom surfaces of the semiconductor layers. The gate structure wraps around the semiconductor layers and the metal oxide layers. The metal oxide layers are in contact with the gate structure.
Public/Granted literature
- US20230395703A1 SEMICONDUCTOR STRUCTURE Public/Granted day:2023-12-07
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