A semiconductor chip includes a substrate, a source structure disposed on the substrate, and a support pattern disposed on the source structure. Each of the source structure and the support pattern includes polysilicon. The semiconductor chip further includes an electrode structure disposed on the support pattern, and a plurality of vertical structures extending vertically through the electrode structure. The electrode structure includes a lower electrode structure disposed on the support pattern and including a plurality of lower gate electrodes and a plurality of first insulating films, a second insulating film disposed on the lower electrode structure, and an upper electrode structure disposed on the second insulating film and including a plurality of upper gate electrodes and a plurality of third insulating films. The vertical structures contact the source structure above the source structure.